| 发明名称 |
CRYSTALLINE COMPOSITION, WAFER, AND SEMI-CONDUCTOR STRUCTURE |
| 摘要 |
A crystalline composition is provided. The crystalline composition may include gallium and nitrogen; and the crystalline composition may have an infrared absorption peak at about 3175 cm<SUP>-1</SUP>, with an absorbance per unit thickness of greater than about 0.01 cm<SUP>-1</SUP>.
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| 申请公布号 |
US2008008855(A1) |
申请公布日期 |
2008.01.10 |
| 申请号 |
US20070621560 |
申请日期 |
2007.01.09 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
D'EVELYN MARK P.;PARK DONG-SIL;LEBOEUF STEVEN F.;ROWLAND LARRY B.;NARANG KRISTI J.;HONG HUICONG;ARTHUR STEPHEN D.;SANDVIK PETER M. |
| 分类号 |
H01F1/40;B32B15/00 |
主分类号 |
H01F1/40 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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