发明名称 |
Body-tied, strained-channel multi-gate device and methods of manufacturing same |
摘要 |
A fin-FET or other multi-gate transistor is disclosed. The transistor comprises a semiconductor substrate having a first lattice constant, and a semiconductor fin extending from the semiconductor substrate. The fin has a second lattice constant, different from the first lattice constant, and a top surface and two opposed side surfaces. The transistor also includes a gate dielectric covering at least a portion of said top surface and said two opposed side surfaces, and a gate electrode covering at least a portion of said gate dielectric. The resulting channel has a strain induced therein by the lattice mismatch between the fin and the substrate. This strain can be tuned by selection of the respective materials.
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申请公布号 |
US2008006908(A1) |
申请公布日期 |
2008.01.10 |
申请号 |
US20060483906 |
申请日期 |
2006.07.10 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN HONG-NIEN;LIN HORNG-CHIH;HUANG TIAO-YUAN |
分类号 |
H01L29/06;H01L31/00 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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