TRENCH FIELD EFFECT TRANSISTORS

摘要

Trench field effect transistors (trench FETs) include alternating gate trenches (20) and source trenches (22). The gate trenches (20) include insulated gates (16). The source trenches (22) include a source connected conductive layer (30) and insulated sidewalls (32). A source electrode (36) extends into the top of the source trenches (22) to contact the source connected conductive layer (30) as well as the source electrode (8) and body (6), the latter being contacted at the side of the source trenches (22). The field effect transistors can deliver a useful combination of switching speed, specific on-resistance and breakdown voltage.