| 摘要 |
In a semiconductor device where a memory region and a logic region are embedded, the machining accuracy of the element in the logic region can be maintained well and junction leak can be prevented at an isolation dielectric film part in the memory region. A semiconductor device includes a semiconductor substrate where a DRAM part and a Logic part are embedded and the surface heights of the DRAM part and the Logic part are formed to be almost equal, a first STI film formed in the Logic region of the semiconductor substrate, and a second STI film which is formed in the DRAM part of the semiconductor substrate and has a surface height higher than the surface height of the semiconductor substrate. The difference between the surface height of the first STI film and the surface height of the semiconductor substrate is smaller than the difference between the surface height of the second STI film and the surface height of the semiconductor substrate. The surface height of the first STI film is preferably almost equal to the surface height of the semiconductor substrate. |
