发明名称 ESTER COMPOUNDS AND THEIR PREPARATION, POLYMERS, RESIST COMPOSITIONS AND PATTERNING PROCESS
摘要 <p>A resist composition comprising a polymer derived from a polymerizable ester compound as a base resin is provided which is thermally stable and sensitive to high-energy radiation and has excellent sensitivity and resolution, thereby being useful for micropatterning with electron beam or deep-UV. A polymerizable ester compound is represented by one of the formulae (1) to (4), wherein A^1 is a polymerizable functional group having a carbon-carbon double bond; A^2 is O, methylene or ethylene; R^1 is a straight, branched or cyclic monovalent hydrocarbon group of 1 to 10 carbon atoms; R^2 is H or a straight, branched or cyclic monovalent hydrocarbon group of 1 to 10 carbon atoms; or a combination of R^1, a combination of R^2, or a combination of R^1 and R^2 may bond together to form an aliphatic hydrocarbon ring with some carbon atoms in the oxygen heterocycle to which they are attached, and in that event, each of R^1 and R^2 is a straight, branched or cyclic alkylene group of 1 to 10 carbon atoms and R^3 is a straight, branched or cyclic monovalent hydrocarbon group of 1 to 10 carbon atoms; or a combination of R^3 may bond together to form an aliphatic hydrocarbon ring with some carbon atoms in the ring to which they are attached, and in that event, each of R^3 is a straight, branched or cyclic alkylene group of 1 to 10 carbon atoms; and n is an integer of 0 to 6. A polymer comprises at least recurring units derived from the polymerizable ester compound and has a weight average molecular weight of 2,000 to 100,000. A resist composition comprises the polymer, an acid generator, and an organic solvent. A method for forming a pattern comprises the steps of: (a) applying the resist composition onto a substrate to form a resist coating; (b) heat-treating the coating and exposing to high-energy radiation or electron beam through a photomask; and (c) optionally heat-treating the exposed coating and developing with a developer.</p>
申请公布号 KR20080005107(A) 申请公布日期 2008.01.10
申请号 KR20070067523 申请日期 2007.07.05
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 OHASHI MASAKI;KINSHO TAKESHI;WATANABE TAKERU
分类号 C07D307/20;C07D307/78;C07D307/88;C07D307/94 主分类号 C07D307/20
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