| 发明名称 |
Nonvolatile Memory Having Raised Source and Drain Regions |
| 摘要 |
The technology relates to nonvolatile memory with a modified channel region such as a raised source and drain or a recessed channel region.
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| 申请公布号 |
US2008006871(A1) |
申请公布日期 |
2008.01.10 |
| 申请号 |
US20070775118 |
申请日期 |
2007.07.09 |
| 申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LIAO YI YING |
| 分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
| 代理机构 |
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代理人 |
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