PHOTODIODE ARRAY

摘要

In a photodiode array (1), a plurality of light detection channels (10) for permitting light to be detected to enter are formed on an n type substrate (2) which has an n type semiconductor layer (12). The photodiode array (1) is provided with a p^- type semiconductor layer (13) formed on the n type semiconductor layer (12) on the substrate (2); a resistor (4) arranged for each light detection channel (10) with one end portion connected with a signal conductive wire (3); and an n type isolating section (20) formed between the light detection channels (10). The p^- type semiconductor layer (13) configures pn junction at an interface with the substrate (2), and corresponding to the light detection channels, the p^- type semiconductor layer has a plurality of amplifying regions (AM) for avalanche-amplifying carriers generated by the entry of the light to be detected. The isolating region (20) is formed so that each amplifying region (AM) of the p^- type semiconductor layer (13) is formed corresponding to each light detection channel (10).