| 摘要 |
A method for etching an AlTiC workpiece comprises forming a copper mask layer on the AlTiC, lithographically patterning said copper mask layer to thereby expose portions of the AlTiC, reactive ion etching the AlTiC using a process gas comprising argon and fluorine, and removing the mask layer. The walls of the portions of the AlTiC covered by the copper mask layer are vertical, even when etching is to a substantial depth.
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