| 摘要 |
A positive type resist composition is provided to realize improved resolution while maintaining the rectangular shape of a pattern in a photolithographic process using high energy beams such as ArF excimer laser beams as a light source. A positive type resist composition comprises: (A) a resin soluble in an alkali developer in the presence of an acid; and (B) an acid generating compound generating an acid in response to active rays or radiations, wherein the resin is a polymer compound having repeating units represented by the following formula 1. In formula 1, each R1 represents H, methyl or trifluoromethyl; each of R2 and R3 represents a C1-C4 linear or branched alkyl; R4 is a C1-C20 linear, branched or cyclic monovalent hydrocarbon group optionally containing a hetero atom; X1 is O, S or CH2CH2; X2 is O, S, CH2 or CH2CH2; n is 1 or 2; and each of a1, a2, b, c, d1 and d2 represents the proportion of each repeating unit, wherein each of a1, a2, c, d1 and d2 is greater than 0 and less than 1, and b is equal to or greater than 0.01 and less than 1, with the proviso that a1 and a2 cannot represent 0 at the same time and a1+a2+b+c+d1+d2=1.
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