发明名称 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To form a micropattern with high accuracy and sufficient manufacturing process margin without using a photomask involving complicated manufacturing process and high manufacturing cost such as a Levenson type phase shift mask. <P>SOLUTION: Double exposure is performed by using a pair of photomasks 1 and 2 such as an ordinary chrome mask or a half-tone phase shift mask or the like which is not the Levenson type phase shift mask, and a pattern is transferred onto a photoresist. Here, when performing exposure with the photomask 2 for forming a finer pattern, double pole illumination is used as an illumination system. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008004917(A) 申请公布日期 2008.01.10
申请号 JP20070050730 申请日期 2007.02.28
申请人 FUJITSU LTD 发明人 YAMAMOTO TOMOHIKO;ASAI SATORU
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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