| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element by which a high rate of MR change can be obtained, and which exhibits potential properties adaptable to high density; and to provide a magnetic head, a magnetic recording and reproducing device, and a magnetic random access memory using it. SOLUTION: A multilayer film is composed of a first magnetic layer whose magnetization direction is substantially fixed, a second magnetic layer whose magnetization direction changes with the external magnetic field, and a magnetic spacer layer which is set between the first magnetic layer and the second magnetic layer. Electrodes for passing current perpendicularly to the film surface of the multilayer film are formed. The magnetoresistance effect element is manufactured in such a way that the magnetization direction of the first magnetic layer and the magnetization direction of the second magnetic layer are nearly perpendicular to each other when the external magnetic field is zero, and the resistance is reduced as the external magnetic field penetrates it. COPYRIGHT: (C)2008,JPO&INPIT
|
