发明名称 |
Non-volatile memory device including a variable resistance material |
摘要 |
A non-volatile memory device including a variable resistance material is provided. The non-volatile memory device may include a buffer layer, a variable resistance material layer and/or an upper electrode, for example, sequentially formed on a lower electrode. A schottky barrier may be formed on an interface between the buffer layer and the lower electrode. The variable resistance material layer may be formed with a variable resistance property.
|
申请公布号 |
US2008006907(A1) |
申请公布日期 |
2008.01.10 |
申请号 |
US20070822446 |
申请日期 |
2007.07.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
LEE EUN-HONG;CHO CHOONG-RAE;GENRIKH STEFANOVICH |
分类号 |
H01L29/12;H01L29/76 |
主分类号 |
H01L29/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|