| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide forming a technology of a gold film for controlling grain boundary diffusion of Si in a semiconductor device. <P>SOLUTION: A first gold film is evaporated by layer thickness of 50% or above of whole gold film thickness by managing a temperature of a semiconductor substrate at 210°C or less. A first gold film is thermally processed where the temperature of the semiconductor substrate is evaporated at the temperature from an evaporation temperature of the first gold film to 270°C or less. A second gold film is evaporated by adjusting it to whole gold film thickness so as to form it. In the gold film 20 which is thus formed, a recrystallized grain is large and thus a grain boundary decreases. Grain boundary diffusion of Si to a surface of the gold film is controlled effectively, and bonding strength can be improved when attaching a pellet. <P>COPYRIGHT: (C)2008,JPO&INPIT |
