| 摘要 |
PROBLEM TO BE SOLVED: To reduce a number of transistors in a pixel of an amplified solid-state imaging apparatus, and at the same time, to largely reduce a number of wiring. SOLUTION: The apparatus includes photoelectric conversion elements 1 arranged in a two dimensional shape, charge transfer transistors 2 which perform charge transfer of signal charge from photoelectric conversion elements 1 to a floating diffusion unit 3, a reset transistor 4 which resets potential of the floating diffusion unit 3, and an amplification transistor 5 which amplifies potential of the floating diffusion unit 3 and reads out as an imaging signal. A pixel unit 11 is composed by commonly connecting a drain of the reset transistor 4 and a drain of the amplification transistor 5 connected to a power line 7 wired in a row direction, and at the same time, connecting a source of the amplification transistor 5 to a signal line 8 wired in a row direction; and the signal line 8 of the n-th row (n is an integer one or more) is shared by each pixel unit 11 (or 11A) of the (2n)th row and (2n+1)th row. COPYRIGHT: (C)2008,JPO&INPIT
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