| 摘要 |
PROBLEM TO BE SOLVED: To provide a high quality, long single crystal SiC having a large diameter in which the occurrence of defects such as micropipes is suppressed. SOLUTION: A production method for the single crystal SiC includes the steps of: fixing a SiC seed single crystal wafer 4 to a susceptor; and growing the single crystal SiC by continuously supplying raw materials for producing the single crystal SiC onto the SiC seed single crystal wafer 4 from outside, wherein the average temperature gradient of the susceptor 5, the SiC seed single crystal wafer 4 and the single crystal SiC having an increased thickness with growth is set to be within the range of 0.5 to 9°C/mm, the average temperature gradient being in the vertical direction (longitudinal direction) of the susceptor 5. COPYRIGHT: (C)2008,JPO&INPIT
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