发明名称 |
Laser Irradiation Method and Apparatus, Method for Annealing Non-Single Cyrstal, and Method for Manufacturing Semiconductor Device |
摘要 |
It is an object of the present invention to provide a laser irradiation technique which can keep the stability of the laser oscillator high and which can perform laser process homogeneously by avoiding the adverse effect due to the return light reflected on an irradiation when, for example, crystallizing with a lens array, and to provide a crystallization method and a method for manufacturing a semiconductor device which use the technique. In the present invention, a laser beam emitted from a laser oscillator is divided into a plurality of beams through a lens array such as a cylindrical lens array, the divided beams pass through opening portions of a slit while being focused at the opening portions and condensed beam is irradiated to an irradiation surface. Thus, the light reflected on the irradiation object can be blocked by using the slit.
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申请公布号 |
US2008008222(A1) |
申请公布日期 |
2008.01.10 |
申请号 |
US20050596583 |
申请日期 |
2005.06.06 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TANAKA KOICHIRO |
分类号 |
H01L21/268;B23K26/06;B23K26/067;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L29/786 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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