STACKED NONVOLATILE MEMORY DEVICE, AND METHOD FOR FABRICATING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a stacked nonvolatile memory device for which nitride read-only memory devices are stacked, and to provide a method for fabricating it. SOLUTION: The stacked nonvolatile memory device comprises a plurality of bitline layers 110 and 130 and word line layers 120 and 140 stacked on top of each other. The bitline layers 110 and 130 comprise a plurality of bitlines that can be formed using advanced processing techniques making fabrication of the device efficient and cost effective. The device can be configured for NAND operation. COPYRIGHT: (C)2008,JPO&INPIT