| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of thin film capable of forming the thin film excellent in crystallinity and surface morphology on an amorphous material layer, and to provide a manufacturing method of a phase change memory device using it. SOLUTION: The manufacturing method of the thin film comprises: a stage of forming a seed layer including at least one kind selected from a group comprising germanium, antimony, tellurium, antimony telluride and antimony-doped germanium by supplying one kind or two kinds selected from a group comprising a germanium precursor, an antimony precursor and a tellurium precursor to the upper surface of the amorphous material layer; and a stage of forming the thin film by supplying at least one kind selected from the group comprising the germanium precursor, the antimony precursor and the tellurium precursor onto the seed layer. The manufacturing method of the phase change memory device uses it. COPYRIGHT: (C)2008,JPO&INPIT
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