NON-VOLATILE MEMORY DEVICE HAVING FOUR STORAGE NODE FILMS AND METHOD OF OPERATING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a non-volatile memory device having four storage node films, and to provide a method of operating the same. SOLUTION: The nonvolatile memory device includes a first fin 105a and a second fin 105b. A buried insulating layer 115 is arranged between the first fin 105a and the second fin 105b. A control gate electrode 140 covers side faces of the first and second fins opposite to the buried insulation layer. A gate insulation film 130 is arranged between the first and second fins and the control gate electrode. A first source region and a first drain region are formed in a first fin portion 105a and separated from the control gate electrode, respectively. A second source region and a second drain region that are formed in a second fin portion 105b and separated from the control gate electrode, respectively. A first storage node film 160a1 and a second storage node film 160a2 are formed on a side face of the first fin 105a with the control gate electrode inbetween, and a third storage node film 160b1 and a fourth storage node film 160b2 are formed on a side face of the second fin 105b with the control gate electrode inbetween. COPYRIGHT: (C)2008,JPO&INPIT