SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURING

摘要

A semiconductor component includes a semiconductor layer ( 110 ) having a trench ( 326 ). The trench has first and second sides. A portion ( 713 ) of the semiconductor layer has a conductivity type and a charge density. The semiconductor component also includes a control electrode ( 540, 1240 ) in the trench. The semiconductor component further includes a channel region ( 120 ) in the semiconductor layer and adjacent to the trench. The semiconductor component still further includes a region ( 755 ) in the semiconductor layer. The region has a conductivity type different from that of the portion of the semiconductor layer. The region also has a charge density balancing the charge density of the portion of the semiconductor layer.