Wafer processing device for use in semiconductors processing chamber for production of semiconductors, has base substrate on which wafer is located, where filler seals gap in device

摘要

The device (10) has a base substrate on which a wafer is located. An electrical electrode is embedded in a surface of the base substrate. A functional element is penetrated into the device such that a gap is formed. Filler (230) seals the gap in the device. The filler has an etching rate of less than 1000 Angstrom per minute, if the device is exposed to a working environment in a temperature range of 25-600 degree Celsius, where it concerns with the halogens, reactive ions, plasma corroding, plasma cleaning or a gas cleaning environment at a working temperature of 400 degree Celsius. An independent claim is also included for a method for manufacturing of the wafer processing device.