| 摘要 |
A plasma processing method is provided to improve stability and uniformity of a plasma by optimizing an RF power ramping speed. A substrate is supplied to a plasma process chamber(202). A gas mixture is flown to a chamber(204). RF power is applied on an electrode, such that plasma is formed in the chamber(206). A metric, which represents a DC bias on the electrode, is collected(208). An application parameter of the RF power, which is applied on the electrode, is adjusted in response to the collected metric. The substrate includes a patterned structure, which includes an antenna ratio greater than 50000. The substrate is tested after a data processing step. The data is correlated with the collected metric.
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