| 摘要 |
<p>A polymer for a bilayer photoresist is provided to improve the etching resistance of a photoresist pattern for ArF, thereby ensuring stability in the subsequent etching step. A polymer for a photoresist comprises polymerization repeating units obtained by addition polymerization of a compound represented by the following formula 1 and a compound represented by the following formula 2. In formulae 1 and 2, each of R and R1 represents a C1-C5 linear or branched alkylene group, and each of m and n is an integer of 1-5. The compound of formula 1 includes 3-(trimethoxysilyl)propyl methacrylate and the compound of formula 2 includes a compound having a carbon content of at least 80 wt% based on its total molecular weight.</p> |
