<p>Large capacity memory systems (FB-DIMMs) are constructed using stacked memory integrated circuits (220) or chips (310). The stacked memory chips are constructed in such a way that eliminates problems such as signal integrity while still meeting current and future memory standards.</p>
申请公布号
WO2007028109(A3)
申请公布日期
2008.01.10
申请号
WO2006US34390
申请日期
2006.09.01
申请人
METARAM, INC.;RAJAN, SURESH;SMITH, MICHAEL;WANG, DAVID
