| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor memory of an AG-AND flash memory which hardly generates read error even when microfabricated. SOLUTION: The memory has a plurality of first gate electrodes 13 disposed on a semiconductor substrate 10 via a gate insulating film 11, an electrical insulating isolator 15 disposed on each of the plurality of first gate electrodes, and a plurality of second gate electrodes 19 disposed on the semiconductor substrate via a tunnel oxide film 21. When a semiconductor memory 30 is constituted wherein two second gate electrodes 19 face each other across one first gate electrode 13, the second gate electrode 19 is extended via the electrical insulating film 17 on a region from a side of a line widthwise direction of the first gate electrode 13 to a side of a line widthwise direction of the isolator 15 thereon, and each lower end of the plurality of second gate electrodes 19 is projected in a horizontal direction, thus forming an overhanging part J in each second gate electrode 19. COPYRIGHT: (C)2008,JPO&INPIT
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