发明名称 |
POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS |
摘要 |
<p>A positive type resist composition is provided to obtain a resist material suitable for a microprocessing process and having excellent resolution, dependency on compression and mask fidelity. A positive type resist composition comprises: (A) a resist component having a carboxylic acid moiety protected with an acetal protecting group decomposed under the action of an acid; and (B) a compound capable of generating an acid in response to active rays or radiations, wherein deprotection of the carboxylic acid moiety protected with an acetal protecting group of the resin component is not performed by a beta-deprotecting reaction.</p> |
申请公布号 |
KR20080005102(A) |
申请公布日期 |
2008.01.10 |
申请号 |
KR20070067503 |
申请日期 |
2007.07.05 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
NISHI TSUNEHIRO;KINSHO TAKESHI |
分类号 |
G03F7/039;G03F7/004 |
主分类号 |
G03F7/039 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|