| 摘要 |
To provide a semiconductor porcelain composition in which a portion of Ba of BaTiO 3 is substituted by Bi-Na, which is capable of inhibiting evaporation of Bi in a calcining step, inhibiting the formation of secondary phases by preventing a compositional shift of Bi-Na, further reducing a resistivity at room temperature, and inhibiting a scattering in a Curie temperature, and a method of producing the same. Means for Resolution: By separately preparing a composition of (BaQ)TiO 3 (Q is a semiconductive dopant) and a composition of (BiNa)TiO 3 , and calcining the composition of (BaQ)TiO 3 at a comparatively high temperature and calcining the composition of (BiNa)TiO 3 at a comparatively low temperature to thereby calcine the compositions at their respective optimum temperatures, evaporation of Bi in the composition of (BiNa)TiO 3 can be inhibited, formation of secondary phases can be inhibited by preventing a compositional shift of Bi-Na; and by mixing, forming and sintering the calcined powders, a semiconductor porcelain composition having a small resistivity at room temperature and being inhibited from a scattering in the Curie temperature can be provided. |
