METHOD FOR FABRICATION OF SEMICONDUCTOR DEVICE USING TUNGSTEN LAYER TO SACRIFICIAL HARD MASK,申请号KR20040081383-传众专利搜索

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发明名称	METHOD FOR FABRICATION OF SEMICONDUCTOR DEVICE USING TUNGSTEN LAYER TO SACRIFICIAL HARD MASK
摘要
申请公布号	KR100792409(B1)	申请公布日期	2008.01.09
申请号	KR20040081383	申请日期	2004.10.12
申请人		发明人
分类号	H01L21/027;G03F1/00	主分类号	H01L21/027
代理机构		代理人
主权项
地址

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