| 摘要 |
<p>A method for fabricating a recess gate of a semiconductor device is provided to secure stable operation characteristics of a transistor by removing voids of a polysilicon layer. A recess(33) is formed by etching a substrate(31) of an active region. The recess includes a neck part having a vertical etching surface and a bulb part having a round etching surface. A first polysilicon layer(35) is formed on the substrate in order not to close the neck part of the recess. An etch-back process is performed to etch back the first polysilicon layer. A second polysilicon layer(36) is formed to fill the recess. In the etch-back process for etching the first polysilicon layer, the first polysilicon layer except for the bulb part of the recess is removed. The etch-back process is performed by using a mixed gas of Hbr/O2.</p> |
