BULB TYPE RECESS GATE OF SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A bulb type recess gate of a semiconductor device and a method for fabricating the same are provided to enhance reliability by removing voids in a polysilicon deposition process. A substrate(21) includes a bulb type recess pattern which is formed with a neck pattern(23A) and a ball pattern(23B). A gate insulating layer(25) is formed on a surface of the substrate. A first polysilicon layer(26A) having a groove is buried into the gate insulating layer within the ball pattern. A second polysilicon layer(27) is buried into the groove and the neck pattern. The width of the groove is equivalent to the width of the neck pattern. The first polysilicon layer and the second polysilicon layer are formed by doping phosphor or boron in an in-situ method.