发明名称 |
METAL ORGANIC CHEMICAL VAPOR DEPOSITION EQUIPMENT |
摘要 |
Metal organic chemical vapor deposition equipment is provided to uniformly make a thickness of a film formed on a substrate by rotating a heating member and to acquire an increment in size of the heating member. Metal organic chemical vapor deposition equipment includes a heating member(5) and a flow channel(11). The heating member heats a substrate(20) and includes a holding surface for holding the substrate. The flow channel introduces reaction gas(G1,G2,G3) to the substrate. The heating member is rotatable in a state that the holding surface faces in the flow channel. A height of the flow channel along a flow direction of the reaction gas is constant from an upstream side lateral end(A3) of a position for holding the substrate on the holding surface to a predetermined position(S) of the holding surface. The height is monotonically decreased from the predetermined position to a downstream side. |
申请公布号 |
KR20080004404(A) |
申请公布日期 |
2008.01.09 |
申请号 |
KR20070067270 |
申请日期 |
2007.07.04 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
UENO MASAKI;UEDA TOSHIO;TAKASUKA EIRYO |
分类号 |
H01L21/20;H01L21/205 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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