发明名称 METAL ORGANIC CHEMICAL VAPOR DEPOSITION EQUIPMENT
摘要 Metal organic chemical vapor deposition equipment is provided to uniformly make a thickness of a film formed on a substrate by rotating a heating member and to acquire an increment in size of the heating member. Metal organic chemical vapor deposition equipment includes a heating member(5) and a flow channel(11). The heating member heats a substrate(20) and includes a holding surface for holding the substrate. The flow channel introduces reaction gas(G1,G2,G3) to the substrate. The heating member is rotatable in a state that the holding surface faces in the flow channel. A height of the flow channel along a flow direction of the reaction gas is constant from an upstream side lateral end(A3) of a position for holding the substrate on the holding surface to a predetermined position(S) of the holding surface. The height is monotonically decreased from the predetermined position to a downstream side.
申请公布号 KR20080004404(A) 申请公布日期 2008.01.09
申请号 KR20070067270 申请日期 2007.07.04
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 UENO MASAKI;UEDA TOSHIO;TAKASUKA EIRYO
分类号 H01L21/20;H01L21/205 主分类号 H01L21/20
代理机构 代理人
主权项
地址