CMOS IMAGE SENSOR AND METHOD OF FABRICATING THEREOF

摘要

A CMOS(Complementary Metal Oxide Semiconductor) image sensor and a manufacturing method thereof are provided to restrain generation of a dark current and prevent an N-type impurity from inducing into a substrate by forming photo diode impurity regions. A substrate(201) includes a high concentration P++ layer and an epitaxial-grown P-Epi layer. An N-type impurity is implanted into a photodiode region of the substrate to form an N-type photo diode impurity region(203). A p-type impurity is implanted into the N-type photo diode impurity region to form a P-type photo diode impurity region(204). A gate oxide layer(205) and a gate electrode are formed on the substrate to form a gate stack. The N-type photo diode impurity region is comprised of plural layers on which different N-type impurities are implanted. The N-type photo diode impurity region is comprised of a region on which arsenic(As) is implanted and a region on which phosphorus(P) is implanted.