发明名称
摘要 A device compensated for an undesired capacitance includes a first and a second node between which nodes the undesired capacitance is present. A diode driven in breakthrough is coupled between the first and the second node. As a diode driven in breakthrough exhibits the characteristics of a negative capacitance, a compensation of the undesired capacitance is achieved.
申请公布号 JP4031032(B2) 申请公布日期 2008.01.09
申请号 JP19960527406 申请日期 1996.02.15
申请人 发明人
分类号 H01L21/3205;H03F1/08;H01L23/52;H01L23/64;H01L27/02;H01L27/06 主分类号 H01L21/3205
代理机构 代理人
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