| 发明名称 |
OXIDE SINGLE CRYSTAL AND METHOD FOR PRODUCTION THEREOF, AND SINGLE CRYSTAL WAFER |
| 摘要 |
<p>An oxide single crystal having a composition represented by RE x Si 6 O 1.5x+12 (RE: La, Ce, Pr, Nd, or Sm, x: 8 to 10) is grown by using the Czochralski method such that the crystal growth orientation coincides with the c-axis direction. The solidification rate (the weight of the grown crystal ÷ the weight of the charged raw material) in the crystal growth is less than 45%.</p> |
| 申请公布号 |
EP1876269(A1) |
申请公布日期 |
2008.01.09 |
| 申请号 |
EP20060745738 |
申请日期 |
2006.04.27 |
| 申请人 |
SHINKOSHA CO., LTD.;HONDA MOTOR CO., LTD. |
发明人 |
TAKAHASHI, KATSUAKI;MOCHIZUKI, KEISUKE;KAWAMINAMI, SHUICHI;HIGUCHI, YOSHIKATSU;SUGAWARA, MASAYUKI;NAKAYAMA, SUSUMU |
| 分类号 |
C30B29/34;C30B15/00 |
主分类号 |
C30B29/34 |
| 代理机构 |
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代理人 |
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| 主权项 |
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