METHODE FOR CHEMICAL VAPOR DEPOSITION USED PLASMA ENHANCED AT THE SAME

摘要

A chemical vapor deposition method using a plasma enhanced chemical vapor deposition equipment is provided to prevent generation of particles upon stoppage of a plasma reaction by progressively reducing high-frequency power. A PECVD(Plasma Enhanced Chemical Vapor Deposition) equipment produces a dielectric on a wafer(108) with a plasma reaction by applying high-frequency power to electrodes(112,114) positioned on an upper and a lower. The wafer is placed in a chamber(100). Two or more reactive gases are supplied into the chamber and a first dielectric is formed on the wafer with the plasma reaction. One or more gases out of the two or more reactive gases are stopped, so that the remaining reactive gases being supplied into the chamber and residual gases are plasma-reacted and a high-frequency power for inducing the plasma reaction is progressively reduced to form a second dielectric on the first dielectric. Further, the reactive gases contain a silane gas and a nitrous oxide gas.