发明名称 LASER STIMULATED ATOM PROBE CHARACTERIZATION OF SEMICONDUCTOR AND DIELECTRIC STRUCTURES
摘要 <p>A laser stimulated atom probe for atom probe imaging of dielectric and low conductivity semiconductor materials is disclosed. The laser stimulated atom probe comprises a conventional atom probe providing a field emission tip and ion detector arrangement, a laser system providing a laser short laser pulse and synchronous electronic timing signal to the atom probe, and an optical system for delivery of the laser beam onto the field emitting tip apex. Due to enhanced absorption, it is also possible to realize a photo ionization mechanism, wherein the laser stimulates electronic transitions from the more extended surface atoms, thereby ionizing the surface atom.</p>
申请公布号 EP1649485(A4) 申请公布日期 2008.01.09
申请号 EP20040756572 申请日期 2004.07.01
申请人 CHISM, WILLIAM, W., II 发明人 CHISM, WILLIAM, W., II
分类号 H01J49/00;B01D59/44;G01Q70/00;H01J37/285 主分类号 H01J49/00
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