| 摘要 |
A method for fabricating a semiconductor device is provided to reduce an open defect of a landing contact hole by guaranteeing a shoulder margin of a gate hard mask. An insulation layer is formed on a substrate(21) having a conductive pattern. A hard mask layer is formed on the insulation layer. A photoresist pattern is formed on the hard mask layer. The hard mask layer is etched by using the photoresist pattern as a barrier. The photoresist pattern is eliminated. While using the hard mask layer as a barrier, the insulation layer is etched by using CF-based gas as main gas at a temperature of 35-60 °C. The hard mask layer can be made of one or more layers selected from a group of SiON, an amorphous carbon layer, a polysilicon layer, an organic polymer layer, an inorganic polymer layer and a nitride layer.
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