| 摘要 |
A semiconductor memory device is provided to assure normal auto-precharge operation in a tWR measurement test period, regardless of the operation by a write with auto-precharge command and a normal write command. A tWR control part(10) outputs a bank precharge signal, by receiving a clock enable signal and a test mode signal for tWR measurement. A burst operation control part(101) outputs a burst operation stop signal disabled in a test mode period, by receiving a burst operation signal and the test mode signal. An auto-precharge operation control part(12) outputs an auto-precharge signal in response to the burst operation stop signal and an internal command signal. A selection signal output part(13) outputs a row selection signal and a column selection signal in response to the bank precharge signal and the auto-precharge signal.
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