发明名称 Linear antenna switch arm FET
摘要 The FET device comprises a meandering channel path situated between interdigitated source 28 and drain 29 fingers. Intermediate source/drain 31 and gate 32 strips are situated between the source and drain fingers. The device layout uses less area than conventional series connected FET devices.
申请公布号 GB2439820(A) 申请公布日期 2008.01.09
申请号 GB20070012470 申请日期 2007.06.27
申请人 FILTRONIC COMPOUND SEMICONDUCTORS LTD 发明人 RONALD ARNOLD
分类号 H01L27/088;H01L29/423;H03F3/16 主分类号 H01L27/088
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