| 摘要 |
A method for forming a metal line of a semiconductor device is provided to improve a yield of a product by preventing a bridge fail between metal line patterns from occurring. A method for forming a metal line of a semiconductor device comprises the steps of: forming a first photoresist film in a top part of a metal layer on a semiconductor wafer(110); forming a first photoresist pattern for exposing a metal layer of a predetermined region by performing an exposing process using an exposure mask on the first photoresist film, the predetermined region being formed between a part where a metal line of a line shape will be formed and a part where a metal line of an island shape will be formed; etching the metal layer by using the first photoresist pattern as an etch mask; depositing a nitride film(116b) in an etched region of the metal layer; forming a second photoresist film on a front surface of an output; forming a second photoresist pattern for forming the metal lines of the line shape and the island shape by performing the exposure process using the exposure mask on the second photoresist film; and forming the metal line by etching the metal layer by using the second photoresist pattern as the etch mask.
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