发明名称 |
Method for fabricating semiconductor device |
摘要 |
The present invention relates to a method for fabricating a semiconductor device capable of preventing bridge formation caused by damages to a capacitor oxide structure including a phosphosilicate glass (PSG) layer and a tetraethylorthosilicate (TEOS) layer during a wet cleaning process. The method includes the steps of: forming a PSG layer on a substrate; forming a capping layer on the PSG layer; forming a TEOS layer on the capping layer; selectively etching the TEOS layer, the capping layer and the PSG layer to form a plurality of openings exposing predetermined portions of the substrate; cleaning the openings; forming a conductive layer on the openings; and removing the conductive layer until the TEOS layer is exposed, so that the conductive layer is isolated for each opening.
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申请公布号 |
US7316973(B2) |
申请公布日期 |
2008.01.08 |
申请号 |
US20040002706 |
申请日期 |
2004.12.03 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
ROH JAI-SUN |
分类号 |
H01L21/00;H01L21/8242;H01L21/02;H01L21/3105;H01L21/768 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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