发明名称 |
Semiconductor device having super junction structure and method for manufacturing the same |
摘要 |
A semiconductor device includes: a center region; a periphery region; and a semiconductor layer including pairs of a first region having a first impurity amount and a second region having a second impurity amount. The first and the second regions are alternately aligned in a plane. The periphery region includes an utmost outer and an utmost inner periphery pairs. The utmost outer periphery pair has a difference between the second and the first impurity amounts, which is smaller than a maximum difference in the periphery region. The utmost inner periphery pair has a difference between the second and the first impurity amounts, which is larger than a difference in the center region.
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申请公布号 |
US7317213(B2) |
申请公布日期 |
2008.01.08 |
申请号 |
US20050211524 |
申请日期 |
2005.08.26 |
申请人 |
DENSO CORPORATION |
发明人 |
YAMAGUCHI HITOSHI;MAKINO TOMOATSU;HATTORI YOSHIYUKI;OKADA KYOKO |
分类号 |
H01L29/74;H01L29/36;H01L29/417;H01L31/111 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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