发明名称 Level shifter with low leakage current
摘要 A voltage level shift circuit includes a first stage which receives an input signal having voltage levels Vcc and Vss, where Vcc>Vss, and which outputs complementary first and second intermediate signals, wherein the complementary first and second intermediate signals have voltage levels VI<SUB>high </SUB>and VI<SUB>low</SUB>, where VI<SUB>high</SUB>>VI<SUB>low</SUB>; and a second stage which receives the first and second intermediate signals, and which outputs complementary first and second output signals, wherein the complementary first and second output signals have voltage levels VO<SUB>high </SUB>and VO<SUB>low</SUB>, where VO<SUB>high</SUB>>VO<SUB>low</SUB>, wherein VI<SUB>high</SUB>>VO<SUB>high </SUB>or VI<SUB>low</SUB><VO<SUB>low</SUB>, and wherein VO<SUB>high</SUB>>Vcc and VO<SUB>low</SUB><Vss.
申请公布号 US7317335(B2) 申请公布日期 2008.01.08
申请号 US20070764241 申请日期 2007.06.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MIN YOUNG-SUN;KIM NAM-JONG
分类号 H03K19/0175;H03K19/094 主分类号 H03K19/0175
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