OXIDE FILM MANUFACTURING DEVICE USING CVD APPARATUS IN A SINGLE WAFER CHAMBER TYPE AND METHOD THEREOF

摘要

A device for manufacturing an anti-oxidation layer using a CVD apparatus of a single wafer chamber type and its manufacturing method are provided to enhance reliability of a product by preventing oxidation of a tungsten wiring layer. Ammonia gas is used for preventing oxidation of a tungsten wiring layer. The pyrolysis temperature of the ammonia gas corresponds to 500 to 800 °C. A flow rate of the ammonia gas corresponds to 0 to 20 SLM. In the ammonia gas process, process pressure is set as 10 mTorr to 350 Torr and the process time of the ammonia gas is set as 0 to 200 seconds. An anti-oxidation layer(305) is formed to prevent oxidation of tungsten. The anti-oxidation layer is formed by using the ammonia gas.