发明名称 |
ETCHING METHOD FOR ZNSE POLYCRYSTALLINE SUBSTRATE |
摘要 |
When applying reactive ion etching on a ZnSe polycrystalline substrate, reactive gas used therefor is only chlorine-based gas which does not include a hydrocarbon group. Or the reactive gas is gas prepared by mixing chlorine- based gas which does not include a hydrocarbon group with other gas. The other gas is inert gas or gas which does not react to ZnSe. BCl3 gas is one kind of chlorine-based gas. Ar gas is one kind of inert gas. RF power is one mean s for activating the gas.
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申请公布号 |
CA2364745(C) |
申请公布日期 |
2008.01.08 |
申请号 |
CA20012364745 |
申请日期 |
2001.12.06 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KURISU, KENICHI |
分类号 |
C03C15/02;G02B5/18;C09K13/00;G02B1/02;H01L21/00;H01L21/302;H01L21/3065;H01L21/461;H01L21/465 |
主分类号 |
C03C15/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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