发明名称 |
Method of patterning transparent conductive film, thin film transistor substrate using the same and fabricating method thereof |
摘要 |
A method of patterning a transparent conductive film adaptive for selectively etching a transparent conductive film without any mask processes, a thin film transistor for a display device using the same and a fabricating method thereof are disclosed. In the method of patterning the transparent conductive film, an inorganic material substrate is prepared. An organic material pattern is formed at a desired area of the inorganic material substrate. A thin film having a different crystallization rate depending upon said inorganic material and said organic material is formed. The thin film is selectively etched in accordance with said crystallization rate.
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申请公布号 |
US7316784(B2) |
申请公布日期 |
2008.01.08 |
申请号 |
US20040774701 |
申请日期 |
2004.02.10 |
申请人 |
LG.PHILIPS LCD CO., LTD. |
发明人 |
AHN BYUNG CHUL;LIM BYOUNG HO;CHOI BYEONG DAE |
分类号 |
H01L21/302;H01L21/20;H01L21/336;H01L21/768;H01L21/77;H01L21/84;H01L27/12;H01L29/786 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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