| 摘要 |
A method for forming a metal gate of a semiconductor device is provided to prevent generation of a silicon nitride and stress by forming metal silicide layers between respective interfaces. A gate dielectric(211), a gate conductive layer(221), a first metal silicide layer(231), a gate metal layer(241), a second metal silicide layer(261), and a gate hard mask layer(271) are sequentially laminated on a semiconductor substrate(200) to form a stack structure. The stack structure is patterned up to a predetermined depth of the gate conductive layer by using a gate mask pattern to form a first gate stack. A material layer for a sidewall capping layer is deposited on the entire surface of the semiconductor substrate on which the first gate stack is formed. As the material for a sidewall capping layer is wholly etched to form a sidewall capping layer on a sidewall of the first gate stack, a second gate stack exposing the semiconductor substrate is formed. A selective oxidizing process is performed on an exposed surface of the gate conductive layer of the second gate stack and an exposed surface of the semiconductor substrate. Further, a trench for recess channel is formed on the semiconductor substrate.
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