发明名称 |
Semiconductor memory device having sense amp over-driving structure and method of over-driving sense amplifier thereof |
摘要 |
The present invention relates to a semiconductor memory device in which current consumption incurred by excessive over-driving can be prevented by dividing a memory core region into a plurality of memory blocks and then over-driving only sense amplifiers of a corresponding memory block.
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申请公布号 |
US7317653(B2) |
申请公布日期 |
2008.01.08 |
申请号 |
US20050319566 |
申请日期 |
2005.12.29 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
PARK JAE BOUM;LEE BYEONG CHEOL |
分类号 |
G11C8/00 |
主分类号 |
G11C8/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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