| 摘要 |
<p>The invention relates to a method for finely polishing/structuring thermosensitive dielectric materials, in particular materials exhibiting a low thermal expansion coefficient, by a laser beam consisting in directing an intensive ultrashort laser beam to a processable material surface, in adjusting the action time within a range from 10-13 s to 10-11 s and a laser pulse energy in such a way that it is less than an ablation threshold but sufficient for provoking a Coulomb explosion. The inventive method makes it possible to carry out a material removal within a nanometer range by means of laser ultrashort pulses ranging between picoseconds and subpicoseconds, wherein the material surface is finely polished during a pre-ablation process step (removal less than the ablation range) and the processable surface is low-heated (approximately up to 10°C, only) due to the extremely shot laser beam action time.</p> |
