发明名称 HIGH EFFICIENT SI-THIN FILM SOLAR CELL
摘要 A high-efficient silicon thin-film solar cell is provided to reduce carrier recombination generated by light and to increase efficiency by using a buffer layer inserted into a p-layer and an i-layer. A high-efficient silicon thin-film solar cell is provided with one or more solar cell layers which are laminated thereon. The solar cell layer includes a buffer layer(200) between a p-layer(103) and an i-layer(104). The buffer layer is doped with a p-type. The buffer layer is made of one selected from a carbide, an oxide, a nitride, and a fluoride of Si:H. A lower glass substrate, a lower transparent conductive layer, plural pin semiconductor layer, a transparent conductive layer, and a rear electrode layer are sequentially laminated in the solar cell layer. A transparent electrode layer is formed between the pin semiconductor layers.
申请公布号 KR20080003624(A) 申请公布日期 2008.01.08
申请号 KR20060062080 申请日期 2006.07.03
申请人 LG ELECTRONICS INC. 发明人 LEE, HEON MIN;AHN, SHE WON;KIM, BUM SUNG;JI, KWANG SUN;EO, YOUNG JOO
分类号 H01L31/0445;H01L31/075 主分类号 H01L31/0445
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